| PART |
Description |
Maker |
| GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
|
International Rectifier
|
| FGL35N120FTD FGL35N120FTDTU |
1200V, 35A Trench IGBT
|
Fairchild Semiconductor
|
| RJH1CV7DPQ-E013 |
1200V - 35A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| SIDC23D120H6 |
Diodes - HV Chips - SIDC23D120H6, 1200V, 35A
|
Infineon
|
| 6MBP35VDA120-50 |
IGBT MODULE (V series) 1200V / 35A / IPM
|
Fuji Electric
|
| 7MBP35VDA120-50 |
IGBT MODULE (V series) 1200V / 35A / IPM
|
Fuji Electric
|
| IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| 40TPS08 40TPS08A 40TPS12A 40TPS12 |
Silicon Controlled Rectifier, 55 A, 1200 V, SCR, TO-247AC, TO-247AC, 3 PIN
1200V 35A Phase Control SCR in a TO-247AC package
800V 35A Phase Control SCR in a TO-247AC package
|
Vishay Semiconductors
International Rectifier
|
| 7MBR35SD120 |
PIM/Built-in converter with thyristor and brake (S series) 1200V / 35A / PIM
|
FUJI[Fuji Electric]
|
| IRG4PH20K IRG4PH20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
|
IRF[International Rectifier]
|
